GC2510 C gc2546 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 1 tm ? www. microsemi .com copyright ? 2007 rev.: 2009-02-03 rohs com p liant power generation step recovery diodes description the gc2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications. strict material and process controls result in high reproducibility. a unique silicon dioxide passivation process assures greater reliability and low leakage currents at high temperatures. diodes are available in various capacitance ranges for each of the 4 voltage ratings. these diodes represent the lowest transition time (snap time) available for each voltage rating. unle ss otherwise specified, capacitance will be within the range shown below for each type. a capacitance tolerance of 10% is available at an additional charge. diodes can be optimized for custom electrical or mechanical sp ecifications. custom parameters for capacitance, voltage, transition time, se ries resistance, etc. are available upon request. all specifications shown above are based on the style 30 package. many packages options are available, including 150a, 35, 36, 42 and 56. chip mounted on carriers with gold wire/ribbon leads are also available. other package styles are avai lable to meet specific requirements. some limitations apply. contact microsemi for details. applications the gc2500 series of step recovery varactors are used as harmonic generators for all orders of multiplication x2 through x20 for both narrow and wide bandwidths. applications include local oscillators, voltage controlled oscillators, frequency synthesizers, and up converters. they are also used in comb generators to generate a broad frequency spectrum and in high speed pulse shaping circuits. important: for the most current data, consult our website : www.microsemi.com specifications are subject to change, consult the factor y for further information. these devices are esd sensitive and mu st be handled using esd precautions. 1 the gc2500 series of products are supplied with a rohs complaint gold finish . absolute maximum ratings at 25o c (unless otherwise specified) rating symbol value unit maximum leakage current @80% of minimum rated v b i r 50 na storage temperature t stg -65 to +150 oc operating temperature t op -55 to +125 oc key features ? x2 through x20 harmonics generation ? excellent efficiency ? high output power ? rohs compliant 1 applications/benefits ? harmonics generation ? local oscillators ? frequency synthesizers ? up converters g g c c 2 2 5 5 1 1 0 0 C C g g c c 2 2 5 5 4 4 6 6 downloaded from: http:///
GC2510 C gc2546 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 2 tm ? www. microsemi .com copyright ? 2007 rev.: 2009-02-03 rohs com p liant power generation step recovery diodes chip electrical parameters @ 25 ? c (unless otherwise specified) model number v b (v) i r =10 a (min) c j (pf) 1 @-6v t l (ns) 2 (min) t notes: t (ps) (typ) r s ( ? ) 3 @25 ma (max) ? p 1 ( ? c/w) 4 (max) GC2510 15 0.2-0.4 8 60 1.2 125 gc2511 15 0.4-0.6 8 60 1.0 100 gc2512 15 0.6-0.8 8 60 0.7 100 gc2513 15 0.8-1.0 8 60 0.5 75 gc2514 15 1.0-1.4 8 60 0.4 75 gc2515 15 1.4-2.0 8 60 0.3 60 gc2516 15 2.0-3.0 8 60 0.25 60 gc2520 20 0.2-0.4 11 70 1.0 100 gc2521 20 0.4-0.6 11 70 0.7 75 gc2522 20 0.6-0.8 11 70 0.6 75 gc2523 20 0.8-1.0 11 70 0.5 75 gc2524 20 1.0-1.4 11 70 0.4 75 gc2525 20 1.4-2.0 11 70 0.3 60 gc2526 20 2.0-3.0 11 70 0.25 60 gc2530 30 0.2-0.4 17 100 0.8 75 gc2531 30 0.4-0.6 17 100 0.6 60 gc2532 30 0.6-0.8 17 100 0.5 60 gc2533 30 0.8-1.0 17 100 0.4 60 gc2534 30 1.0-1.4 17 100 0.3 60 gc2535 30 1.4-2.0 17 100 0.25 50 gc2536 30 2.0-3.0 17 100 0.2 50 gc2540 40 0.2-0.4 21 150 0.8 60 gc2541 40 0.4-0.6 21 150 0.6 50 gc2542 40 0.6-0.8 21 150 0.5 50 gc2543 40 0.8-1.0 21 150 0.4 50 gc2544 40 1.0-1.4 21 150 0.3 50 gc2545 40 1.4-2.0 21 150 0.25 40 gc2546 40 2.0-3.0 21 150 0.2 40 1. junction capacitance is measure at 1 mhz. 2. carrier lifetime is measure at i f = 10ma, i r = 6ma . 3. series resistance is measure using a transmission loss technique @ 1 ghz. 4. thermal resistance is measure using pulsed conditions while measuring forward voltage drop across the diode mounted in an infinite heat sink. downloaded from: http:///
GC2510 C gc2546 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 3 tm ? www. microsemi .com copyright ? 2007 rev.: 2009-02-03 rohs com p liant power generation step recovery diodes typical package options package style 00 package style 17 notes: - dimensions vary by model number - consult factory for details - order as gc25xx C 00 package style 30 package style 42 other package styles available on request consult factory m m e e c c h h a a n n i i c c a a l l downloaded from: http:///
|
